LTB-3D,Japan

The University of Tokyo
GMSI (Global Center of Excellence for Mechanical Systems Innovation)Open seminar
Lectures for graduate students at the School of Engineering, The University of Tokyo

DATE: 18th January 2010
PLACE: Faculty of Engineering Building #11, 1F Auditorium

14:00-16:00
Low Temperature Direct Wafer Bonding: Mechanisms and Applications

Professor Cindy Colinge
Tyndall National Institute,Lee Maltings, Cork, Ireland

Some of the recent challenges outlined in the 2008 International Technology Roadmap for Semiconductors (ITRS) include reducing feature size for increased device density, increased speed and improved heat removal from the devices, novel interconnect schemes, signal isolation to reduce crosstalk in RF applications, and increasing the number of functions on a chip. As the end of the roadmap nears, i.e. scaling of devices is no longer feasible, new integration methods that permit further increase of density and functionality must be explored. One approach that has the potential for addressing all these issues is wafer bonding. Wafer bonding includes contacting whole wafers directly without an intermediate layer or “glue” (direct bonding), and bonding wafers using an intermediate layer, e.g. using a polymer, a metal, or spin-on-glass. The versatility of this technology has given rise to many improved and unique substrates, devices, circuits, and sensors. In this talk Professor Colinge will introduce the mechanisms behind low temperature direct bonding and will discuss applications that benefit from wafer bonding.

16:00-18:00
Atomic Layer Deposition (ALD) for Bio-Sensor and Microfluidic Applications

Prof. Helmut Baumgart
Old Dominion University, Department of Electrical and Computer Engineering
Newport News, Virginia, USA

Atomic Layer Deposition (ALD) is recognized as a key technology for microelectronics to advance beyond the 45nm device node. This presentation will discuss the vast application potential of ALD that reaches far beyond the mainstream research efforts of developing novel high-k dielectric gate stacks for the replacement of SiO2 as MOSFET gate insulator. At ODU several research activities are conducted in the areas of ALD thin film nanotechnology, Si nanowire based devices, nano-resonator biosensors and microfluidic devices, even extending ALD to superconducting RF films for accelerator cavities. For Si nanowire based devices we have demonstrated successful integration of ALD high-k dielectric films for the charge trapping layer and blocking oxide layer for non-volatile memory cells with a 3-D gate-all-around electrode. However, the application potential of ALD is not confined to microelectronics and novel high-k dielectric gate stacks. The unique capabilities of ALD to coat complex high aspect ratio surface morphologies render ALD ideal for the synthesis of nested co-axial multiple-walled nanotubes by template replication. This synthesis may be extended to fabricate coaxial tube-in-tube nanostructures of different materials with applications in multi sensors, broad band detectors, nanocapacitors and hybrid photovoltaic cells. Zeta potential modulation by ALD technology for the development of electroosmotic pumps in nanoporous templates is discussed. Our electroosmotic nano-pumps have no moving parts, no wear and tear, and transport fluids with the use of direct current potential differences of a few volts.