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Program | Social Event | Hotel | Location | Registration Committee | Sponsors | Contact |JJAP/STAP |
| July 15, Tuesday | ||||
| 8:30 | REGISTRATION | Chair / Moderator | ||
| 9:00-9:20 | Opening Remarks | T. Suga, The University of Tokyo | MC: N. Kawamata |
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| 9:20-10:10 | Low-temperature bonding process for 3D Integration | [Keynote] Three Dimensional Dynamic Random Access Memory; T. Kirihata, IBM | D. Temple | |
| COFFEE BRAEK | ||||
| 10:30-11:20 | Low-temperature bonding process for 3D Integration | [Keynote] 3DIC Technology – CoWoS as an Example; Shin-Puu Jeng, TSMC | Jenn-Ming
Song T. Fukushima |
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| 11:20-11:40 | Process Development for 3D Integration: Conductive wafer bonding for high density inter-chip interconnection; Wenqi Zhang, National Center for Advanced Pachuging, China | |||
| 11:40-12:00 | Brick-Like Based KGDs Self-Assembly and Connection Technologies for 3DIC Integration; Yu-Cheng Fan, National Taipei University of Technology | |||
| 12:00-12:20 | Copper-to-Dielectric Heterogeneous Bonding for 3D Integration, Wei Lin, IBM | |||
| 12:20-13:20 | LUNCH | |||
| 13:20-13:40 | Low-temperature bonding process for 3D Integration | Scaling of 3D interconnect technology incorporating metal-metal bonds to pitches of 10 microns and below for infrared focal plane array applications; Dorota S. Temple, RTI International | R.
Aschenbrenner E. Higurashi |
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| 13:40-14:00 | 3D Integration Applications for Low Temperature Direct Bond Technology; Paul Enquist, Ziptronix, Inc. | |||
| 14:00-14:20 | Low Temperature Wafer Bonding for Wafer-Level 3D Integration; B. Rebhan, EV Group | |||
| 14:20-15:10 | [Keynote] Nanobonding - A Key Technology for Emerging Applications in Health and Environment; M. Jamal Deen, Macmaster University | |||
| 15:25-17:00 | SHORT PRESENTAION | |||
| 3D Integration Process | Mechanical Grinding of Au/SiO2 Hybrid-bonded Substrates for 3D Integrated Image Sensors; K. Hagiwara, NHK | MC:
N. Kawamata |
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| Cu/dielectric Hybrid Bonding Using Surface-Activated Bonding (SAB) Technologies for 3D Integration; Ran He, The University of Tokyo | ||||
| Via-Last/Backside-Via 3D Integration Using a Visible-Light Laser Debonding Technique; T. Fukushima, Tohoku University | ||||
| Highly Thermoresistant Temporary Bonding/Debonding System without Organic Adhesives for 3D Integration; H. Hashiguchi, Tohoku University | ||||
| Surface-Tension Driven Self-Assembly for VCSEL Chip Bonding to Achieve 3D and Hetero Integration; Y. Ito, Tohoku University | ||||
| Photonic Applications of Low-temperature Bonding | Coupling Efficiency between Laser Diode and Optical Isolator Integrated by Photosensitive Adhesive Bonding; D. Tamura, Shibaura Institute of Technology | |||
| Investigation of High Temperature Process for III-V/SOI Hybrid Photonic Devices with AlInAs Oxidation Current Confinement Layer; Y. Hayashi, Tokyo Institute of Technology | ||||
| InAs/GaAs Quantum Dot Lasers Metal-Stripe-Bonded onto SOI Substrate; Yuan-Hsuan Jhang, The University of Tokyo | ||||
| Fabrication of Walk-Off Compensating Wavelength-Conversion Devices with Stacks of Multiple Plates by Use of Room-Temperature Bonding; Y. Ariga, Chuo University | ||||
| Light Propagation Properties of Si Waveguides after Removing III-V Layer on a III-V/SOI Wafer Fabricated by Plasma Activated Bonding; J. Suzuki, Tokyo Institute of Technology | ||||
| Layer Transfer | Epitaxial growth of GaInAsP system on wafer-bonded InP/Si substrate; J. Kishikawa, Sophia University | |||
| Large-scale Ge-on-Insulator wafers using low-temperature bonding and Epitaxial Lift-Off (ELO) technique; E. Mieda, AIST | ||||
| Surface Activated Bonding: Recent Developments | Carbon Nanotube Bump Interconnect for Flexible Multilayer Substrates; M. Fujino, The University of Tokyo | |||
| Room temperature direct bonding of Si wafers smoothed by Ne beam irradiation; Y. Kurashima, AIST | ||||
| Room temperature bonding of electroplated Au patterns with atomically smooth surface prepared by a replication process using a sacrificial layer; Y. Kurashima, AIST | ||||
| Room-Temperature Wafer Bonding With Smooth Au Thin Film in Ambient Air Using Ar RF Plasma Activation; K. Okumura, The University of Tokyo | ||||
| Room Temperature Bonding of Sapphire with Sapphire or Metal Substrates in Air using Au Films; M. Ishii, Namiki Precision Jewel Co., Ltd. | ||||
| Room Temperature Bonding of Wafers in Air using Au-Ag Alloy Films; H. Kon, Tohoku University | ||||
| New Material and Device Structure | Improvement of Thermoelectric TiZrNiSn Thin Flims by Contact Layers; W. Wunderlich, Tokai University | |||
| 17:00-17:50 | Poster Session | |||
| 18:00 | Leaving to Reception (Bus to Tokyo Bay Cruise) | |||
| July 16, Wednesday | ||||
| 8:30-8:50 | Layer Transfer | Micromechanical View of Heterointegration by Wafer Bonding and Layer Splitting; H. Baumgart, Old Dominion University. | L. Di Cioccio M. Sasaki |
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| 8:50-9:10 | GaN-on-hBN technology for release and transfer of nitride devices; M. Hiroki, NTT Corp. | |||
| 9:10-9:30 | Integration of III-V Materials and Si-CMOS through Double Layer Transfer Process; Kwang Hong Lee, Singapore-MIT Alliance for Research and Technology (SMART) | |||
| 9:30-9:50 | MEMS Applications | Heterogeneous Integration by Wafer-to-Wafer Transfer Technology; S. Tanaka, Tohoku Univ. | ||
| 9:50-10:10 | Low-temperature bonding technologies for MEMS and 3D-IC; M.M.V.Taklo, SINTEF | |||
| 10:10-10:30 | Thermal activation of Au/Ti by interdiffusion for getter film integration in wafer-level vacuum packaging; A. Bosseboeuf, Université Paris Sud | |||
| COFFEE BREAK | ||||
| 10:45-12:30 | SHORT PRESENTAION | |||
| MEMS Applications | Fabrication of Miniaturized Polarization Sensors Using Flip-Chip Bonding With Atmospheric-Pressure Plasma Activation; S. Ikeda, The University of Tokyo | MC: N. Kawamata |
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| Thermocouples Fabricated on Microfluidic Trench Sidewall Capped with Film; M. Shibata, Toyota Technological Institute | ||||
| Surface Activated Bonding Method Applied in MEMS Pressure Sensor with TSV structures; Zijian Wu, Tsinghua University | ||||
| Wafer-Level Packaging for Harsh Environment Application; C. Jia, Carinthian Tech Research AG, | ||||
| Low-temperature Metal Bonding Processes | Cu/Cu Direct Bonding by Metal Salt Generation Bonding Technique with Organic Acid and its Persistence of Reformed Layer; S. Koyama, Gunma University | |||
| Real Time FITR Spectroscopic and Kinetic Studies of Cu Surface Reduction by Using Formic Acid Vapor; Chia-Chen Kuo, National Chung Hsing University | ||||
| Microstructural change of Ag nanoporous bonding joint and interdiffusion of Cu / Ag during thermal aging; Min-Su Kim, Osaka University | ||||
| The effect of Cu particle additions on the microstructure and melting point of Sn-Bi solder for die attachment; O. Mokhtari, Osaka University | ||||
| Room-temperature vacuum packaging using ultrasonic bonding with Cu compliant rim; R. Takigawa, Kyushu University | ||||
| In-Situ Observation of Ultrasonic Bonding Using High Speed Camera; T. Shuto, Kyushu University | ||||
| Nanoporous Gold as a Versatile Bonding Intermediate; Y. -C. Lin, Tohoku University | ||||
| Low temperature and low pressure bump bonding realized by single-micrometer Ag-nanoparticle bumps; Weixin Fu, Waseda University | ||||
| Low-temperature Metal Bonding Processes | Fine-Pitch Interconnection by Hybrid Cu/Sn-Adhesive Bonding for 3D Integration; M. Ohyama, Waseda University | |||
| New Bonding Material for Power Devices with High Bonding Strength for Operating High Temperature; S. Sekine, Napra Corporation | ||||
| Surface Activated Bonding: Electronic Properties | Directly bonded Ge/GaAs by surface activated bonding for high efficiency III-V multi-junction solar cells; G. Kono, The University of Tokyo | |||
| Effects of Annealing on GaAs/Si Bonding Interfaces for Hybrid Tandem Solar Cells; L. Chai, Osaka City University | ||||
| Annealing temperature dependence of SAB based Si/Si junctions; M.Morimoto, Osaka City University | ||||
| Investigation on the effects of annealing process on the electrical properties of n+-Si/n-SiC junctions; J. Liang, Osaka City University | ||||
| Annealing Characteristics of p+-Si/n-4H-SiC Junctions by Using Surface-Activated Bonding; S. Nishida, Osaka City University | ||||
| Surface activated Bonding: Power Applications | SiC wafer bonding by modified suface activated bonding method; Fengwen Mu, The University of Tokyo | |||
| 100 mm diameter mono-crystalline 4H-SiC/polycrystalline-SiC bonded wafers fabricated by SAB for power device; K. Yagi, SICOXS Co. | ||||
| 12:30-14:00 | LUNCH: Poster Session | |||
| 14:00-14:50 | Solar Cell‚“ | [Keynote] Wafer Bonding Technologies for Photovoltaic and Other Energy Aapplications; M. S. Goorsky, University of California, Los Angeles | O.
Moutanabbir N. Shigekawa |
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| 14:50-15:40 | Power Applications | [Keynote] Reliability of Bonding Technologies for Power Electronics Modules; C. Baliey, University of Greenwich | ||
| 15:40-16:00 | Low temperature metal bonding for 3D and power device packaging; L. Di Cioccio, CEA, LETI | |||
| COFFEE BRAEK | ||||
| 16:20-16:40 | Low-temperature Metal Bonding Processes | Metal-Assisted Hermetic Wafer-Level Packaging; Oussama Moutanabbir, École Polytechnique de Montréal | A. Bosseboeuf J. Mizuno |
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| 16:40-17:00 | Nanoporous Gold Bumps for Thermocompression Bonding; R. Aschenbrenner, Fraunhofer IZM | |||
| 17:00-17:20 | Solid Liquid Inter-Diffusion Bonding at Low Temperature, J. Froemel, Fraunhofer ENAS | |||
| 17:20-17:40 | Direct Bonding for Dissimilar Metals Assisted by Carboxylic Acid Vapor; Shang-Kun Huang, National Chung Hsing University | |||
| 17:40 | Awards | H. Takagi | ||
| 18:00 | Closing Remarks | H. Baumgart | ||
