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2012 3rd IEEE International Workshop
on Low Temperature Bonding for 3D Integration
LTB-3D 2012

The University of Tokyo, Hongo, Japan
May 22-23, 2012


This workshop will focus on low-temperature bonding technologies which will ultimately lead to entirely new manufacturing approaches to 3D and heterogeneous integration of semiconductor devices and microsystems, as well as photonic systems. These bonding technologies are starting to be used widely for the mass production of semiconductor devices and have potential applications in other manufacturing industries.

The workshop invites papers that document new developments in low-temperature bonding technologies, including surface activated bonding (SAB), new device applications, facilities and technologies for mass-production, and basic science relating to these technologies. Their impact on the paradigm shift in the semiconductor industry along with 3D integration technologies is also of interest.

Keynote and invited speeches by world-leading researchers will summarize, clarify and share recent technical trends and the basic science of low-temperature bonding as well as 3D and hetero-integration. Similarly to the preceding 1st (2007) and 2nd (2010) workshops, this workshop will be held as a single-track seminar to provide comprehensive information on the latest technologies and applications, as well as business opportunities.


Professor Dr. Tadatomo Suga
The Univeristy of Tokyo
Research committee of 3D Integration by Low-temperature Bonding
IEEE CPMT Society, Japan Chapter


Topics:

Roles of Low-temperature Bonding in 3D & Hetero-Integration
Marketing, 3D Architectures, Efficiency for 3D CMOS Intergration, Impact for EDA Perspective, OSAT Point of View

Bonding Technologies for 3D & Hetero-Integration
Wafer-to-Wafer Bonding, Die-to-Wafer Bonding, Cu Hybrid Bonding, Temporary Bonding & De-bonding, Polymers for Wafer Level Packaging

Hydrophilic & Plasma-assist Bonding and its Applications
Oxide Fusion Bonding, Wafer-Level Hermetic Bonding, Si Photonics, Hetero-integration of Optoelectronic Systems, BSI CMOS Image Sensors, Nano-Micro Fluidics Application

Surface Activated Bonding (SAB) : Current Status and Future Outlook
Overview of SAB for Room-Temperature Bonding, Metal-metal direct bonding at room temperature, Micro Laser Doppler Velocimeter, Frequency-Conversion Devices and Solid-State Lasers, Magneto-Optic Garnet for Waveguide Optical Isolator, InP/Si Bonding for On-chip Optical Interconnection, Bio-medical Device Applications

Fundamentals of Nano-bonding
Characterization of Surface Profile for SAB, In-situ TEM Observation of Nano-bonding, Electrical Properties of Bonded Interface

New Processes for Low-temperature Bonding
Vapor-Assisted Surface Activation Metho, Water Containing Plasma Activation, Atomic Diffusion Bonding, Low temperature bonding using Formic Acid, Bonding of CNT to Metal for Vertical Interconnection

New Aspect of Solder and Electro-plating Techniques for 3D Integration
Solder/Adhesive Bonding, Lead-free Bonding with Hydrogen-radical Treatment

SAB Tools for Volume Production


Important date:

  • Submission of abstracts: March 14th, 2012
  • Presentation Materials: April 22nd, 2012
  • Conferenece: May 22nd-23 rd, 2012