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| Oct. 5, Tuesday
⟨ JST (UTC+9) ⟩
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| 9:00 |
OPENING REMARKS
Naoteru Shigekawa, Osaka City University, / Tadatomo Suga,
Meisei University, Japan
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| 9:30 |
SAB for photonic applications
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5A-01
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High Luminous Light-Emitting Diodes for Automotive Headlamps Fabricated Using Surface Activated Bonding;
Masatsugu Ichikawa, Nichia Corporation, Japan
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Co-Chairs:
E. Higurashi,
N. Nishiyama
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| 9:50 |
5A-02
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Tailor-made Laser Chip by Bonding for High Energy Laser System;
Arvydas Kausas, Institute for Molecular Science, Japan
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| 10:10 |
5A-03
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* Improved Process for Room-temperature Bonding Multiple GaAs Thin Plates to Develop Wavelength-conversion Devices;
Yuki Takahashi, Chuo University, Japan
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| 10:25 |
5A-04
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LNOI photonics fabricated on Si wafer by room temperature bonding;
Kaname Watanabe, Kyushu University, Japan
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| 10:40-10:55 |
BREAK |
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| 10:55 |
New processes and Equipments for SAB
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5A-05
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Sputtering Technique to Fabricate Smooth Surface Oxide Film for Room Temperature Bonding;
Takayuki Saito, Canon ANELVA Corporation, Japan
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Co-Chairs:
Y. Ohno,
M. Fujino
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| 11:15 |
5A-06
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Surface smoothing of Au plated films by template stripping towards low-temperature bonding for 3D integration;
Le Hac Huong Thu, National Institute of Advanced Industrial Science and Technology (AIST), Japan
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| 11:30 |
5A-07
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* Surface preparation of metal films by gas cluster ion beams using organic acid vapor for wafer bonding;
Soichi Hanahara, University of Hyogo, Japan
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| 11:45 |
5A-08
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* New Long Life Fast Atom Beam Source for Surface Activated Bonding;
Ryo Morisaki, Nagoya University, Japan
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| 12:05-13:25 |
LUNCH |
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| 13:25 |
Hydrophilic Bonding
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5P-01
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Quantification of Wafer Bond Strength of Silicon Nitride under Controlled Atmosphere;
Kai Takeuchi, Meisei University, Japan
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Chair:
R. Takigawa
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| 13:45 |
5P-02
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Interfacial Analysis of Bonded SiCN Interfaces by Neutron Reflectometry;
Masahisa Fujino, National Institute of Advanced Industrial Science and Technology (AIST), Japan
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| 14:00 |
5P-03
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Direct bonding of GaN and Si substrates using wet cleaning processes;
Shoya Fukumoto, National Institute of Advanced Industrial Science and Technology (AIST), Japan
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| 14:15-14:30 |
BREAK |
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| 14:30 |
Bonding of diamond and semiconductors
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5P-04
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Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature;
Yutaka Ohno, Tohoku University, Japan
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Co-Chairs:
T. Shimatsu,
K. Tanabe
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| 14:50 |
5P-05
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* High temperature stability of p+-Si/p-diamond heterojunction diodes;
Yota Uehigashi, Osaka City University, Japan
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| 15:05 |
5P-06
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Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions;
Takashi Matsumae, National Institute of Advanced Industrial Science and Technology (AIST), Japan
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| 15:20 |
5P-07
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* Fabrication of GaN/diamond structure for efficient thermal management of power device;
Ryo Kagawa, Osaka City University, Japan
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| 15:35 |
5P-08
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[Invited]
GaN-HEMTs on Diamond prepared by Room-Temperature Bonding Technology;
Shuichi Hiza, Mitsubishi Electric Corporation, Japan
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| 15:55-16:10 |
BREAK |
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| 16:10 |
Keynote 1
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5P-09
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[Keynote]
Progress of diamond substrate development;
Hong-Xing Wang, Xi’an Jiaotong University, China
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Co-Chairs:
N. Toyoda,
N. Shigekawa
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| 17:10 |
5P-10
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[Keynote]
Heat Transport across Interfaces for the Optimization of Heat Sinking in Device Applications;
Martin Kuball, University of Bristol, United Kingdom
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| 18:10 |
End of session
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| Oct. 6, Wednesday
⟨ JST (UTC+9) ⟩
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| 9:00 |
Bonding of Wide Bandgap Semiconductors |
6A-01
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Fabrication of Ga2O3/Si direct bonding interface for high power device appliations;
Jianbo Liang, Osaka City University, Japan
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Chair:
T. Shimatsu
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| 9:20 |
6A-02
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Hydrophilic bonding of SiC substrate dipped in hydrofluoric acid with Ga2O3 film through atomically thin intermediate layer;
Takashi Matsumae, National Institute of Advanced Industrial Science and Technology (AIST), Japan
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| 9:35 |
6A-03
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* Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding;
Kazuki Sawai, Osaka City University, Japan
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| 9:50-10:05 |
BREAK |
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| 10:05 |
Metal direct bonding
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6A-04
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Impacts of Misalignment on Bonding Strength of Cu-Cu Hybrid Bonding;
Shunsuke Furuse, Sony Semiconductor Solutions Corporation, Japan
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Co-Chairs:
T. Fukushima,
F. Inoue
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| 10:25 |
6A-05
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Sputtered Copper Nitride-Copper Nitride Direct Bonding;
Liangxing Hu, Nanyang Technological University, Singapore
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| 10:45 |
6A-06
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* Void Evolution in Cu-Cu Bonds;
Hung-Che Liu, National Yang Ming Chiao Tung University, Taiwan
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| 11:05 |
6A-07
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* Microstructure analysis and tensile strength of low temperature Cu bonds using highly-<111> Cu;
Jia Juen Ong, National Yang Ming Chiao Tung University, Taiwan
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| 11:20 |
6A-08
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* Bonded interface properties of Nb direct bonding with Si intermediate layer for 3D interconnection of superconducting devices;
Yuta Takahashi, Saitama University, Japan
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| 11:35 |
6A-09
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* Nanostructural Analysis of Al/beta-Gallium Oxide Interface Fabricated Using Surface Activated Bonding;
Zexin Wan, Osaka City University, Japan
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| 11:50-13:20 |
LUNCH |
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| 13:20 |
3D integration processes
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6P-01
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Chip-to-Chip/Wafer Three-Dimensional Integration of 2.5 mm-sized Neuron and Memory Chips by Via-Last Approach;
Mariappan Murugesan, Tohoku University, Japan
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Co-Chairs:
H. Ishida,
N. Toyoda
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| 13:40 |
6P-02
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* Bonding Position Accuracy of Direct Transfer Bonding, Chip-on-wafer Bonding for III-V/Si Heterogeneous Integration;
Hiromu Onodera, Tokyo Institute of Technology, Japan
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| 13:55 |
6P-03
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* Selective Transfer of Si Thin-Film Microchips for Fluidic Self-Assembly;
Yutaka Fujita, Kyoto University, Japan
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| 14:10 |
6P-04
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Electrodeposition of Indium for Low Temperature 3D Stacking;
Fumihiro Inoue, imec, Belgium
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| 14:25 |
6P-05
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Ultra-broadband Integrated Capacitive Silicon Interposer assembled with SnBi Eutectic Solder;
Charles Muller, Murata Integrated Passive Solutions, France
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| 14:45-15:00 |
BREAK |
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| 15:00 |
MEMS applications
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6P-06
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Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors;
Yoshihiro Koga, Tohoku University, Japan
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Co-Chairs:
H. Takagi,
H. Ishida
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| 15:20 |
6P-07
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Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer;
Shingo Kariya, National Institute of Advanced Industrial Science and Technology (AIST), Japan
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| 15:35 |
6P-08
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Uniform resist film on chip substrate prepared by bonding film coated on sheet;
Tomoya Onuki, Toyota Technological Institute, Japan
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| 15:50 |
6P-09
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Investigation on Low-temperature Temporary Bonding for Microfluidic Devices in Lifescience Applications;
Yang Han, imec, Belgium
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| 16:05-16:20 |
BREAK |
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| 16:20 |
Keynote 2
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6P-10
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[Keynote]
Anodic Bonding a Low Temperature Bonding Method for Processed MEMS and CMOS Wafers;
Roy Knechtel, Schmalkalden University of Applied Sciences, Germany
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Co-Chairs:
M. Sasaki,
M. Fujino
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| 17:20 |
6P-11
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[Keynote]
The unique properties of SiCN as bonding material for hybrid bonding;
Serena Iacovo, imec, Belgium
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| 18:20 |
End of session
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| Oct. 7, Thursday
⟨ JST (UTC+9) ⟩
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| 10:15 |
Characterization of bonding processes and structures
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7A-01
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* Preliminary Study of Atomic Diffusion Bonding in Air using Ag films;
Yuki Watabe, Tohoku University, Japan
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Co-Chairs:
H. Takagi,
K. Tanabe
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| 10:30 |
7A-02
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* Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films;
Taichiro Amino, Tohoku University, Japan
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| 10:45 |
7A-03
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* Fabrication and Characterization of GaN/Diamond bonding interface;
Ayaka Kobayashi, Osaka City University, Japan
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| 11:00 |
7A-04
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* Delamination analysis of stacked via in high-density multilayer Printed Wiring Boards by FEA;
Moe Nozaki, Graduate School of Shibaura Institute of Technology, Japan
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| 11:15 |
7A-05
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* Reproduction Analysis of Fatigue Crack Networks in Sn-Ag-Cu Die attach Joint by FEA;
Hiroki Kanai, Graduate School of Shibaura Institute of Technology, Japan
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| 11:30-13:00 |
LUNCH
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| 13:00 |
Power and RF Applications
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7P-01
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Room Temperature Bonding of Semiconductor Materials Based on Mo/Au Interlayer;
Kang Wang, Xian Jaotong University, China
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Co-Chairs:
K. Tanabe,
F. Inoue
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| 13:20 |
7P-02
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Atomic Diffusion Bonding using AlN films;
Miyuki Uomoto, Tohoku University, Japan
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| 13:35 |
7P-03
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Fabrication of InP/SiC structure using surface activated direct bonding;
Yunhan Fan, Kyushu University, Japan
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| 13:50 |
7P-04
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* Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates;
Kenya Yonekura, Osaka City University, Japan
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| 14:05 |
7P-05
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* Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation;
Hiromu Nagai, Osaka City University, Japan
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| 14:20-14:35 |
BREAK |
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| 14:35 |
Low Temperature bonding for optical applications
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7P-06
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Multijunction Solar Cells using Bonding Technology with Pd Nanoparticle Array and Adhesive Material;
Kikuo Makita, National Institute of Advanced Industrial Science and Technology (AIST), Japan
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Co-Chairs:
E. Higurashi,
T. Taira
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| 14:55 |
7P-07
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* Upconversion Material-Mediated Semiconductor Bonding;
Naoki Sano, Kyoto University, Japan
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| 15:10 |
7P-08
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Atomic Diffusion Bonding using Y2O3 and ZrO2 films;
Takehito Shimatsu, Tohoku University, Japan
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| 15:30 |
7P-09
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* Atomic Diffusion Bonding of Wafers with Oxide Underlayers using Thin Hf Films for Optical Applications;
Gen Yonezawa, Tohoku University, Japan
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| 15:45 |
7P-10
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Towards Hybrid Optical Components via Non-Planar Direct Bonding;
Pascal Birckigt, Fraunhofer Institute for Applied Optics and Precision Engineering, Germany
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| 16:05 |
ANNOUNCEMENTS
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H. Takagi
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| 16:15 |
End of session
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| Satellite Session |
| Oct. 11, Monday
⟨ JST (UTC+9) ⟩
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| 13:20-13:30 |
OPENING FOR SATELLITE SESSION
Takehito Shimatsu, Tohoku University, Japan
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| 13:30 |
Keynote for satellite session 1
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11P-01
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[Keynote]
Interface reactions and thermal transport in heterogeneous heterostructures;
Mark Goorsky, UCLA, USA
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Co-Chairs:
N. Shigekawa,
Y. Ohno
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| 14:30 |
11P-02
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[Keynote]
Low temperature bonding by extension of the SAB concept;
Tadatomo Suga, Meisei University, Japan
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| 15:30-16:00 |
BREAK |
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| 16:00 |
Keynote for satellite session 2
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11P-03
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[Keynote]
Die to wafer for photonic and 3D applications;
Loic Sanchez, LETI, France
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Co-Chairs:
T. Fukushima,
F. Inoue
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| 17:00 |
11P-04
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[Keynote]
From Hot SAB bonding to organic hydrophilic bonding;
Frank Fournel, LETI, France
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| 18:00-18:10 |
AWARD CEREMONY
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Presenter:
H. Takagi
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| 18:10 |
CLOSING REMARKS
Naoteru Shigekawa, Osaka City University, Japan
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