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Program (Updated on 210930)

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Oct. 5, Tuesday   ⟨ JST (UTC+9) ⟩
Naoteru Shigekawa, Osaka City University, / Tadatomo Suga, Meisei University, Japan
9:30 SAB for photonic applications 5A-01 High Luminous Light-Emitting Diodes for Automotive Headlamps Fabricated Using Surface Activated Bonding; Masatsugu Ichikawa, Nichia Corporation, Japan Co-Chairs:
E. Higurashi,
N. Nishiyama
9:50 5A-02 Tailor-made Laser Chip by Bonding for High Energy Laser System; Arvydas Kausas, Institute for Molecular Science, Japan
10:10 5A-03 * Improved Process for Room-temperature Bonding Multiple GaAs Thin Plates to Develop Wavelength-conversion Devices; Yuki Takahashi, Chuo University, Japan
10:25 5A-04 LNOI photonics fabricated on Si wafer by room temperature bonding; Kaname Watanabe, Kyushu University, Japan
10:40-10:55 BREAK  
10:55 New processes and Equipments for SAB 5A-05 Sputtering Technique to Fabricate Smooth Surface Oxide Film for Room Temperature Bonding; Takayuki Saito, Canon ANELVA Corporation, Japan Co-Chairs:
Y. Ohno,
M. Fujino
11:15 5A-06 Surface smoothing of Au plated films by template stripping towards low-temperature bonding for 3D integration; Le Hac Huong Thu, National Institute of Advanced Industrial Science and Technology (AIST), Japan
11:30 5A-07 * Surface preparation of metal films by gas cluster ion beams using organic acid vapor for wafer bonding; Soichi Hanahara, University of Hyogo, Japan
11:45 5A-08 * New Long Life Fast Atom Beam Source for Surface Activated Bonding; Ryo Morisaki, Nagoya University, Japan
12:05-13:25 LUNCH  
13:25 Hydrophilic Bonding 5P-01 Quantification of Wafer Bond Strength of Silicon Nitride under Controlled Atmosphere; Kai Takeuchi, Meisei University, Japan Chair:
R. Takigawa
13:45 5P-02 Interfacial Analysis of Bonded SiCN Interfaces by Neutron Reflectometry; Masahisa Fujino, National Institute of Advanced Industrial Science and Technology (AIST), Japan
14:00 5P-03 Direct bonding of GaN and Si substrates using wet cleaning processes; Shoya Fukumoto, National Institute of Advanced Industrial Science and Technology (AIST), Japan
14:15-14:30 BREAK  
14:30 Bonding of diamond and semiconductors 5P-04 Structural analysis of diamond/silicon heterointerfaces fabricated by surface activated bonding at room temperature; Yutaka Ohno, Tohoku University, Japan Co-Chairs:
T. Shimatsu,
K. Tanabe
14:50 5P-05 * High temperature stability of p+-Si/p-diamond heterojunction diodes; Yota Uehigashi, Osaka City University, Japan
15:05 5P-06 Direct bonding of polycrystalline diamond substrate onto Si wafer under atmospheric conditions; Takashi Matsumae, National Institute of Advanced Industrial Science and Technology (AIST), Japan
15:20 5P-07 * Fabrication of GaN/diamond structure for efficient thermal management of power device; Ryo Kagawa, Osaka City University, Japan
15:35 5P-08 [Invited]   GaN-HEMTs on Diamond prepared by Room-Temperature Bonding Technology; Shuichi Hiza, Mitsubishi Electric Corporation, Japan
15:55-16:10 BREAK  
16:10 Keynote 1 5P-09 [Keynote]   Progress of diamond substrate development; Hong-Xing Wang, Xi’an Jiaotong University, China Co-Chairs:
N. Toyoda,
N. Shigekawa
17:10 5P-10 [Keynote]   Heat Transport across Interfaces for the Optimization of Heat Sinking in Device Applications; Martin Kuball, University of Bristol, United Kingdom
18:10  End of session
Oct. 6, Wednesday   ⟨ JST (UTC+9) ⟩
9:00 Bonding of Wide Bandgap Semiconductors 6A-01 Fabrication of Ga2O3/Si direct bonding interface for high power device appliations; Jianbo Liang, Osaka City University, Japan Chair:
T. Shimatsu
9:20 6A-02 Hydrophilic bonding of SiC substrate dipped in hydrofluoric acid with Ga2O3 film through atomically thin intermediate layer; Takashi Matsumae, National Institute of Advanced Industrial Science and Technology (AIST), Japan
9:35 6A-03 * Polarization inverted GaN/GaN junctions fabricated by surface-activated bonding; Kazuki Sawai, Osaka City University, Japan
9:50-10:05 BREAK  
10:05 Metal direct bonding 6A-04 Impacts of Misalignment on Bonding Strength of Cu-Cu Hybrid Bonding; Shunsuke Furuse, Sony Semiconductor Solutions Corporation, Japan Co-Chairs:
T. Fukushima,
F. Inoue
10:25 6A-05 Sputtered Copper Nitride-Copper Nitride Direct Bonding; Liangxing Hu, Nanyang Technological University, Singapore
10:45 6A-06 * Void Evolution in Cu-Cu Bonds; Hung-Che Liu, National Yang Ming Chiao Tung University, Taiwan
11:05 6A-07 * Microstructure analysis and tensile strength of low temperature Cu bonds using highly-<111> Cu; Jia Juen Ong, National Yang Ming Chiao Tung University, Taiwan
11:20 6A-08 * Bonded interface properties of Nb direct bonding with Si intermediate layer for 3D interconnection of superconducting devices; Yuta Takahashi, Saitama University, Japan
11:35 6A-09 * Nanostructural Analysis of Al/beta-Gallium Oxide Interface Fabricated Using Surface Activated Bonding; Zexin Wan, Osaka City University, Japan
11:50-13:20 LUNCH  
13:20 3D integration processes 6P-01 Chip-to-Chip/Wafer Three-Dimensional Integration of 2.5 mm-sized Neuron and Memory Chips by Via-Last Approach; Mariappan Murugesan, Tohoku University, Japan Co-Chairs:
H. Ishida,
N. Toyoda
13:40 6P-02 * Bonding Position Accuracy of Direct Transfer Bonding, Chip-on-wafer Bonding for III-V/Si Heterogeneous Integration; Hiromu Onodera, Tokyo Institute of Technology, Japan
13:55 6P-03 * Selective Transfer of Si Thin-Film Microchips for Fluidic Self-Assembly; Yutaka Fujita, Kyoto University, Japan
14:10 6P-04 Electrodeposition of Indium for Low Temperature 3D Stacking; Fumihiro Inoue, imec, Belgium
14:25 6P-05 Ultra-broadband Integrated Capacitive Silicon Interposer assembled with SnBi Eutectic Solder; Charles Muller, Murata Integrated Passive Solutions, France
14:45-15:00 BREAK  
15:00 MEMS applications 6P-06 Laminated wafer with the conductive diamond layer using surface activated bonding at room temperature for micro-electro mechanical systems sensors; Yoshihiro Koga, Tohoku University, Japan Co-Chairs:
H. Takagi,
H. Ishida
15:20 6P-07 Simplified vacuum packaging process by gas gettering using the Au/Ta/Ti metal bonding layer; Shingo Kariya, National Institute of Advanced Industrial Science and Technology (AIST), Japan
15:35 6P-08 Uniform resist film on chip substrate prepared by bonding film coated on sheet; Tomoya Onuki, Toyota Technological Institute, Japan
15:50 6P-09 Investigation on Low-temperature Temporary Bonding for Microfluidic Devices in Lifescience Applications; Yang Han, imec, Belgium
16:05-16:20 BREAK  
16:20 Keynote 2 6P-10 [Keynote]   Anodic Bonding a Low Temperature Bonding Method for Processed MEMS and CMOS Wafers; Roy Knechtel, Schmalkalden University of Applied Sciences, Germany Co-Chairs:
M. Sasaki,
M. Fujino
17:20 6P-11 [Keynote]   The unique properties of SiCN as bonding material for hybrid bonding; Serena Iacovo, imec, Belgium
18:20  End of session
Oct. 7, Thursday   ⟨ JST (UTC+9) ⟩
10:15 Characterization of bonding processes and structures 7A-01 * Preliminary Study of Atomic Diffusion Bonding in Air using Ag films; Yuki Watabe, Tohoku University, Japan Co-Chairs:
H. Takagi,
K. Tanabe
10:30 7A-02 * Surface Contamination Effects on Bonding Performance in Atomic Diffusion Bonding of Wafers using Amorphous Si Thin Films; Taichiro Amino, Tohoku University, Japan
10:45 7A-03 * Fabrication and Characterization of GaN/Diamond bonding interface; Ayaka Kobayashi, Osaka City University, Japan
11:00 7A-04 * Delamination analysis of stacked via in high-density multilayer Printed Wiring Boards by FEA; Moe Nozaki, Graduate School of Shibaura Institute of Technology, Japan
11:15 7A-05 * Reproduction Analysis of Fatigue Crack Networks in Sn-Ag-Cu Die attach Joint by FEA; Hiroki Kanai, Graduate School of Shibaura Institute of Technology, Japan
11:30-13:00 LUNCH  
13:00 Power and RF Applications 7P-01 Room Temperature Bonding of Semiconductor Materials Based on Mo/Au Interlayer; Kang Wang, Xian Jaotong University, China Co-Chairs:
K. Tanabe,
F. Inoue
13:20 7P-02 Atomic Diffusion Bonding using AlN films; Miyuki Uomoto, Tohoku University, Japan
13:35 7P-03 Fabrication of InP/SiC structure using surface activated direct bonding; Yunhan Fan, Kyushu University, Japan
13:50 7P-04 * Coplanar waveguides fabricated by directly bonding metal foils to high-resistivity Si substrates; Kenya Yonekura, Osaka City University, Japan
14:05 7P-05 * Fabrication of Ga2O3/3C-SiC direct bonding for efficient surface heat dissipation; Hiromu Nagai, Osaka City University, Japan
14:20-14:35  BREAK  
14:35 Low Temperature bonding for optical applications 7P-06 Multijunction Solar Cells using Bonding Technology with Pd Nanoparticle Array and Adhesive Material; Kikuo Makita, National Institute of Advanced Industrial Science and Technology (AIST), Japan Co-Chairs:
E. Higurashi,
T. Taira
14:55 7P-07 * Upconversion Material-Mediated Semiconductor Bonding; Naoki Sano, Kyoto University, Japan
15:10 7P-08 Atomic Diffusion Bonding using Y2O3 and ZrO2 films; Takehito Shimatsu, Tohoku University, Japan
15:30 7P-09 * Atomic Diffusion Bonding of Wafers with Oxide Underlayers using Thin Hf Films for Optical Applications; Gen Yonezawa, Tohoku University, Japan
15:45 7P-10 Towards Hybrid Optical Components via Non-Planar Direct Bonding; Pascal Birckigt, Fraunhofer Institute for Applied Optics and Precision Engineering, Germany
16:15  End of session
Satellite Session
Oct. 11, Monday   ⟨ JST (UTC+9) ⟩
Takehito Shimatsu, Tohoku University, Japan
13:30 Keynote for satellite session 1 11P-01 [Keynote]   Interface reactions and thermal transport in heterogeneous heterostructures; Mark Goorsky, UCLA, USA Co-Chairs:
N. Shigekawa,
Y. Ohno
14:30 11P-02 [Keynote]   Low temperature bonding by extension of the SAB concept; Tadatomo Suga, Meisei University, Japan
15:30-16:00  BREAK  
16:00 Keynote for satellite session 2 11P-03 [Keynote]   Die to wafer for photonic and 3D applications; Loic Sanchez, LETI, France Co-Chairs:
T. Fukushima,
F. Inoue
17:00 11P-04 [Keynote]   From Hot SAB bonding to organic hydrophilic bonding; Frank Fournel, LETI, France
18:00-18:10 AWARD CEREMONY Presenter:
H. Takagi
Naoteru Shigekawa, Osaka City University, Japan
* Student presentations